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 STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z
N-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESHTM Power MOSFET
Features
Type STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1

VDSS (@Tjmax) 800 V 800 V 800 V 800 V
RDS(on) < 4.5 < 4.5 < 4.5 < 4.5
ID 2.5 A 2.5 A 2.5 A 2.5 A
3 1
3
TO-220
TO-220FP
1
2
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1.
DPAK
3 2 1
IPAK
Internal schematic diagram
D(2)
Application
Switching applications
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Table 1. Device summary
Marking P3NK80Z F3NK80Z D3NK80Z D3NK80Z Package TO-220 TO-220FP DPAK IPAK Packaging Tube Tube Tape and reel Tube
G(1)
S(3)
AM01476v1
Order codes STP3NK80Z STF3NK80Z STD3NK80ZT4 STD3NK80Z-1
September 2009
Doc ID 9565 Rev 6
1/18
www.st.com 18
Contents
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
3 4 5 6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220, DPAK IPAK 800 800 30 2.5 1.57 10 70 0.56 2000 4.5 2500 -55 to 150 2.5 (1) 1.57 (1) 10 (1) 25 0.2 TO-220FP Unit
VDS VDGR VGS ID ID IDM(2) PTOT
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor
V V V A A A W W/C V V/ns V C
VESD(G-S) dv/dt (3) VISO TJ Tstg
Gate source ESD (HBM-C=100 pF, R=1.5 k) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 2.5 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX.
Table 3.
Symbol
Thermal data
Value Parameter TO-220 TO-220FP 5 62.5 300 DPAK IPAK 1.78 100 C/W C/W C Unit
Rthj-case Rthj-a Tl
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
1.78
Doc ID 9565 Rev 6
3/18
Electrical ratings
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Table 4.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25 C, ID=IAR, VDD=50 V) Value 2.5 170 Unit A mJ
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Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Electrical characteristics
2
Electrical characteristics
(TCASE=25 C unless otherwise specified) Table 5.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1 mA, VGS= 0 VDS = max rating, VDS = max rating, Tc = 125 C Min. 800 1 50
10
Typ.
Max.
Unit V A A A V
IDSS
IGSS VGS(th) RDS(on)
Gate body leakage current VGS = 20 V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 50 A VGS = 10 V, ID = 1.25 A 3 3.75 3.8
4.5 4.5
Table 6.
Symbol gfs
(1)
Dynamic
Parameter Test conditions Min. Typ. 2.1 485 57 11 22 17 27 36 40 19 3.2 10.8 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
Forward transconductance VDS =15 V, ID = 1.25 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25 V, f=1 MHz, VGS=0
Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd
-
-
VGS=0, VDS =0 to 640 V VDD=400 V, ID= 1.25 A, RG= 4.7 , VGS=10 V (see Figure 19) VDD=640 V, ID = 2.5 A VGS =10 V
-
-
-
-
-
-
1. Pulsed: pulse duration=300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Doc ID 9565 Rev 6
5/18
Electrical characteristics
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Table 7.
Symbol ISD ISDM VSD
(1) (2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, VGS=0 ISD= 2.5 A, di/dt = 100 A/s, VDD=50 V (see Figure 21) ISD= 2.5 A, di/dt = 100 A/s, VDD=50 V, Tj=150 C (see Figure 21) Test conditions Min 384 1600 8.4 474 2100 8.8 Typ. Max 2.5 10 1.6 Unit A A V ns C A ns C A
trr Qrr IRRM trr Qrr IRRM
-
-
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 s, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter Test conditions Min. 30 Typ. Max. Unit V
BVGSO(1) Gate-source breakdown voltage Igs= 1mA (open drain)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Electrical characteristics
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220, DPAK, IPAK Figure 3. Thermal impedance for TO-220, DPAK, IPAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
Doc ID 9565 Rev 6
7/18
Electrical characteristics Figure 8. Transconductance
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs temperature
Figure 13. Normalized on resistance vs temperature
8/18
Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 14. Source-drain diode forward characteristics
Electrical characteristics
Figure 15. Normalized BVDSS vs temperature
Figure 16. Maximum avalanche energy vs temperature
Doc ID 9565 Rev 6
9/18
Test circuits
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
3
Test circuits
Figure 18. Gate charge test circuit
VDD 12V
2200
Figure 17. Switching times test circuit for resistive load
47k 100nF
1k
RL VGS VD RG PW D.U.T.
F
3.3 F
VDD Vi=20V=VGMAX
2200 F
IG=CONST 100 2.7k 47k PW 1k
AM01469v1
D.U.T. VG
AM01468v1
Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit
A D G S B 25 D.U.T.
A FAST DIODE B
A L=100H B D G 3.3 F 1000 F
L
VD
2200 F
3.3 F
VDD
VDD
ID
RG
S
Vi
D.U.T.
Pw
AM01470v1 AM01471v1
Figure 21. Unclamped inductive waveform
V(BR)DSS VD
Figure 22. Switching time waveform
ton tdon tr toff tdoff tf
90% IDM
90% 10%
ID VDD VDD
0
10%
VDS 90%
VGS
AM01472v1
0
10%
AM01473v1
10/18
Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Doc ID 9565 Rev 6
11/18
Package mechanical data
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
12/18
Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Package mechanical data
TO-220FP mechanical data mm Dim. Min.
A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2
Typ.
Max.
4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4
L7 E A
B Dia L6 L5 F1 F2 F D
H G1
G
L2 L 3
L4 7012510_Rev_J
Doc ID 9565 Rev 6
13/18
Package mechanical data
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
TO-252 (DPAK) mechanical data
DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
14/18
Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Package mechanical data
TO-251 (IPAK) mechanical data
mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60
0068771_H
Doc ID 9565 Rev 6
15/18
Packing mechanical data
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
5
Packing mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
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Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Revision history
6
Revision history
Table 9.
Date 09-Sep-2004 10-Aug-2006 26-Feb-2009 07-Sep-2009
Revision history
Revision 3 4 5 6 Complete document New template, no content change Updated mechanical data VESD(G-S) value has been corrected Changes
Doc ID 9565 Rev 6
17/18
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Please Read Carefully:
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Doc ID 9565 Rev 6


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